Renesas Electronics America Inc-RJH65D27BDPQ-A0#T2 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	100 A
Current - Collector Pulsed (Icm):	-
Vce(on) (Max) @ Vge, Ic:	1.65V @ 15V, 50A
Power - Max:	375 W
Switching Energy:	1mJ (on), 1.5mJ (off)
Input Type:	Standard
Gate Charge:	175 nC
Td (on/off) @ 25°C:	20ns/165ns
Test Condition:	400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr):	80 ns
Operating Temperature:	175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247A

Renesas Electronics America Inc RJH65D27BDPQ-A0#T2