Renesas Electronics America Inc-RJH1CV7DPQ-E0#T2 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	70 A
Current - Collector Pulsed (Icm):	-
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 35A
Power - Max:	320 W
Switching Energy:	3.2mJ (on), 2.5mJ (off)
Input Type:	Standard
Gate Charge:	166 nC
Td (on/off) @ 25°C:	53ns/185ns
Test Condition:	600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):	200 ns
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

Renesas Electronics America Inc RJH1CV7DPQ-E0#T2