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| Part Number | NP83P06PDG-E1-AY | NP83P04PDG-E1-AY |
|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Product Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) | 83A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 41.5A, 10V | 5.3mOhm @ 41.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | 200 nC @ 10 V |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 10100 pF @ 10 V | 9820 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.8W (Ta), 150W (Tc) | - |
| Operating Temperature | 175°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | TO-263 | TO-263 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
