NP83P04PDG-E1-AY
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Renesas Electronics America Inc NP83P04PDG-E1-AY

Manufacturer No:
NP83P04PDG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP83P04PDG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 83A TO-263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.3mOhm @ 41.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:9820 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$2.81
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Similar Products

Part Number NP83P04PDG-E1-AY NP83P06PDG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 83A (Tc) 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 41.5A, 10V 8.8mOhm @ 41.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 190 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 9820 pF @ 10 V 10100 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 1.8W (Ta), 150W (Tc)
Operating Temperature - 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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