NP83P04PDG-E1-AY
  • Share:

Renesas Electronics America Inc NP83P04PDG-E1-AY

Manufacturer No:
NP83P04PDG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP83P04PDG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 83A TO-263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.3mOhm @ 41.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:9820 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.81
186

Please send RFQ , we will respond immediately.

Similar Products

Part Number NP83P04PDG-E1-AY NP83P06PDG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 83A (Tc) 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 41.5A, 10V 8.8mOhm @ 41.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 190 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 9820 pF @ 10 V 10100 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 1.8W (Ta), 150W (Tc)
Operating Temperature - 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PJE8403_R1_00001
PJE8403_R1_00001
Panjit International Inc.
SOT-523, MOSFET
EPC2035
EPC2035
EPC
GANFET N-CH 60V 1.7A DIE
IXTP96P085T
IXTP96P085T
IXYS
MOSFET P-CH 85V 96A TO220AB
STW21N150K5
STW21N150K5
STMicroelectronics
MOSFET N-CH 1500V 14A TO247
SQJA12EP-T1_GE3
SQJA12EP-T1_GE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) 175C MOSFE
STU4N62K3
STU4N62K3
STMicroelectronics
MOSFET N-CH 620V 3.8A IPAK
IXFN120N20
IXFN120N20
IXYS
MOSFET N-CH 200V 120A SOT-227B
IRFD9220
IRFD9220
Vishay Siliconix
MOSFET P-CH 200V 560MA 4DIP
RJL5012DPE-00#J3
RJL5012DPE-00#J3
Renesas Electronics America Inc
MOSFET N-CH 500V 12A 4LDPAK
AUIRLZ24NS
AUIRLZ24NS
Infineon Technologies
MOSFET N-CH 55V 18A D2PAK
AO4419_003
AO4419_003
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 9.7A 8SO
FDD4243-F085P
FDD4243-F085P
onsemi
MOSFET P-CH 40V 14A TO252

Related Product By Brand

ISL88012EVAL1Z
ISL88012EVAL1Z
Renesas Electronics America Inc
EVALUATION BOARD FOR ISL88012
RJH30E3DPK-M2#T2
RJH30E3DPK-M2#T2
Renesas Electronics America Inc
IGBT
9FGV1001C204NBGI
9FGV1001C204NBGI
Renesas Electronics America Inc
IC CLOCK GENERATOR 24QFN
9FGV1006C201LTGI8
9FGV1006C201LTGI8
Renesas Electronics America Inc
IC CLOCK GENERATOR LGA
8T49N286-999NLGI8
8T49N286-999NLGI8
Renesas Electronics America Inc
IC CLOCK AND TIMING
8N3SV76BC-0061CDI8
8N3SV76BC-0061CDI8
Renesas Electronics America Inc
IC OSC VCXO 693.483MHZ 6-CLCC
8N4Q001FG-0121CDI8
8N4Q001FG-0121CDI8
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
R5F10WMAAFA#10
R5F10WMAAFA#10
Renesas Electronics America Inc
IC MCU 16BIT 16KB FLASH 80LQFP
M30620SPFP#U3C
M30620SPFP#U3C
Renesas Electronics America Inc
IC MCU 16BIT ROMLESS 100QFP
70V7519S133BFI8
70V7519S133BFI8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 208CABGA
X40626V14I-2.7A
X40626V14I-2.7A
Renesas Electronics America Inc
IC SUPERVISOR 2 CHANNEL 14TSSOP
X4043S8Z-2.7AT1
X4043S8Z-2.7AT1
Renesas Electronics America Inc
IC SUPERVISOR 1 CHANNEL 8SOIC