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NP82N055NUG-S18-AY
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Renesas Electronics America Inc NP82N055NUG-S18-AY

Manufacturer No:
NP82N055NUG-S18-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
NP82N055NUG-S18-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 82A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:82A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:6mOhm @ 41A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 143W (Tc)
Operating Temperature:175°C
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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In Stock

$1.96
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