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NP80N055PDG-E1B-AY
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Renesas Electronics America Inc NP80N055PDG-E1B-AY

Manufacturer No:
NP80N055PDG-E1B-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
NP80N055PDG-E1B-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:6.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 115W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

$1.72
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