NP80N04MHE-S18-AY
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Renesas Electronics America Inc NP80N04MHE-S18-AY

Manufacturer No:
NP80N04MHE-S18-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
NP80N04MHE-S18-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 80A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 120W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number NP80N04MHE-S18-AY NP80N04NHE-S18-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V 3300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 120W (Tc) 1.8W (Ta), 120W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-262
Package / Case TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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