NP60N04KUG-E1-AY
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Renesas Electronics America Inc NP60N04KUG-E1-AY

Manufacturer No:
NP60N04KUG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP60N04KUG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 60A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 88W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NP60N04KUG-E1-AY NP60N03KUG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 30A, 10V 4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 93 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 5300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 88W (Tc) 1.8W (Ta), 88W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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