NP52N055SUG-E1-AY
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Renesas Electronics America Inc NP52N055SUG-E1-AY

Manufacturer No:
NP52N055SUG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP52N055SUG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 52A TO252
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta), 56W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (MP-3ZK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NP52N055SUG-E1-AY NP55N055SUG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V 10mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 25 V 5250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta), 56W (Tc) 1.2W (Ta), 77W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252 (MP-3ZK) TO-252 (MP-3ZK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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