NP40N10VDF-E1-AY
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Renesas Electronics America Inc NP40N10VDF-E1-AY

Manufacturer No:
NP40N10VDF-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
NP40N10VDF-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 40A TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta), 120W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (MP-3ZP)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NP40N10VDF-E1-AY NP40N10PDF-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V 27mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3150 pF @ 25 V 3150 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta), 120W (Tc) 1.8W (Ta), 120W (Tc)
Operating Temperature 175°C 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252 (MP-3ZP) TO-263 (D²Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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