NP33N06YDG-E1-AY
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Renesas Electronics America Inc NP33N06YDG-E1-AY

Manufacturer No:
NP33N06YDG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP33N06YDG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 33A 8HSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta), 97W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSON
Package / Case:8-SMD, Flat Lead Exposed Pad
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Similar Products

Part Number NP33N06YDG-E1-AY NP23N06YDG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 16.5A, 10V 27mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V 1800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta), 97W (Tc) 1W (Ta), 60W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-HSON 8-HSON
Package / Case 8-SMD, Flat Lead Exposed Pad 8-SMD, Flat Lead Exposed Pad

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