NP22N055ILE-E1-AY
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Renesas Electronics America Inc NP22N055ILE-E1-AY

Manufacturer No:
NP22N055ILE-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
NP22N055ILE-E1-AY Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Part Number NP22N055ILE-E1-AY NP22N055SLE-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 55 V
Current - Continuous Drain (Id) @ 25°C - 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 37mOhm @ 11A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 23 nC @ 5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 1.2W (Ta), 45W (Tc)
Operating Temperature - 175°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - TO-252 (MP-3ZK)
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63

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