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NP16N06YLL-E1-AY
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Renesas Electronics America Inc NP16N06YLL-E1-AY

Manufacturer No:
NP16N06YLL-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP16N06YLL-E1-AY Datasheet
ECAD Model:
-
Description:
ABU / MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.25W (Ta), 27.3W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-HSON
Package / Case:8-SMD, Flat Lead Exposed Pad
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In Stock

$1.49
282

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