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NP16N06QLK-E1-AY
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Renesas Electronics America Inc NP16N06QLK-E1-AY

Manufacturer No:
NP16N06QLK-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP16N06QLK-E1-AY Datasheet
ECAD Model:
-
Description:
POWER TRANSISTOR AUTOMOTIVE MOS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Rds On (Max) @ Id, Vgs:39mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:750pF @ 25V
Power - Max:1W (Ta), 25W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Package / Case:8-PowerLDFN
Supplier Device Package:8-HSON (5x5.4)
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In Stock

$1.73
211

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