NP161N04TUG-E1-AY
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Renesas Electronics America Inc NP161N04TUG-E1-AY

Manufacturer No:
NP161N04TUG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
NP161N04TUG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 160A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:345 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:20.25 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 250W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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Similar Products

Part Number NP161N04TUG-E1-AY NP160N04TUG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 80A, 10V 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 345 nC @ 10 V 270 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 20.25 pF @ 25 V 15750 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 250W (Tc) 1.8W (Ta), 220W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-7 TO-263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

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