NP160N04TDG-E1-AY
  • Share:

Renesas Electronics America Inc NP160N04TDG-E1-AY

Manufacturer No:
NP160N04TDG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP160N04TDG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 160A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 220W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

-
500

Please send RFQ , we will respond immediately.

Similar Products

Part Number NP160N04TDG-E1-AY NP160N04TUG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 160A (Ta) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 80A, 10V 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V 270 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15750 pF @ 25 V 15750 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 220W (Tc) 1.8W (Ta), 220W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263-7 TO-263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

Related Product By Categories

UPA2762UGR-E1-AT
UPA2762UGR-E1-AT
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
FDD6782A
FDD6782A
Fairchild Semiconductor
MOSFET N-CH 25V 20A DPAK
FDMS8690
FDMS8690
Fairchild Semiconductor
MOSFET N-CH 30V 14A/27A 8MLP
UPA2701GR-E1-AT
UPA2701GR-E1-AT
Renesas Electronics America Inc
MOSFET N-CH 30V 14A 8PSOP
SIDR140DP-T1-GE3
SIDR140DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 79A/100A PPAK
PMN27UP,115-NXP
PMN27UP,115-NXP
NXP USA Inc.
MOSFET P-CH 20V 5.7A 6TSOP
2N6756
2N6756
Harris Corporation
N-CHANNEL POWER MOSFET
BSO203SPHXUMA1
BSO203SPHXUMA1
Infineon Technologies
MOSFET P-CH 20V 7A 8DSO
IRF730SPBF
IRF730SPBF
Vishay Siliconix
MOSFET N-CH 400V 5.5A D2PAK
FCP190N65S3R0
FCP190N65S3R0
onsemi
MOSFET N-CH 650V 17A TO220-3
SI3493DV-T1-GE3
SI3493DV-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 5.3A 6TSOP
BSB012N03LX3 G
BSB012N03LX3 G
Infineon Technologies
MOSFET N-CH 30V 39A/180A 2WDSON

Related Product By Brand

XLH535036.864000I
XLH535036.864000I
Renesas Electronics America Inc
XTAL OSC XO 36.8640MHZ HCMOS SMD
74FCT3807AQG
74FCT3807AQG
Renesas Electronics America Inc
IC CLK BUFFER 1:10 100MHZ 20QSOP
8N3SV75AC-0157CDI8
8N3SV75AC-0157CDI8
Renesas Electronics America Inc
IC OSC VCXO 100MHZ 6-CLCC
8N3SV75KC-0007CDI8
8N3SV75KC-0007CDI8
Renesas Electronics America Inc
IC OSC VCXO 622.08MHZ 6-CLCC
8N4DV85KC-0168CDI8
8N4DV85KC-0168CDI8
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N3Q001LG-0084CDI
8N3Q001LG-0084CDI
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
8N3QV01EG-1121CDI
8N3QV01EG-1121CDI
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
8N4Q001LG-1076CDI
8N4Q001LG-1076CDI
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
X9317WS8I-2.7T2
X9317WS8I-2.7T2
Renesas Electronics America Inc
IC DGTL POT 10KOHM 100TAP 8SOIC
82V2052EPFG8
82V2052EPFG8
Renesas Electronics America Inc
IC TELECOM INTERFACE 80TQFP
71V65903S80BQ8
71V65903S80BQ8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 165CABGA
ISL9501CVZ-T
ISL9501CVZ-T
Renesas Electronics America Inc
IC REG CTRLR BUCK 38TSSOP