NP110N03PUG-E1-AY
  • Share:

Renesas Electronics America Inc NP110N03PUG-E1-AY

Manufacturer No:
NP110N03PUG-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP110N03PUG-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 110A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:380 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 288W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
581

Please send RFQ , we will respond immediately.

Similar Products

Part Number NP110N03PUG-E1-AY NP110N04PUG-E1-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 55A, 10V 1.8mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V 390 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24600 pF @ 25 V 25700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 288W (Tc) 1.8W (Ta), 288W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

DMP2160U-7
DMP2160U-7
Diodes Incorporated
MOSFET P-CH 20V 3.2A SOT23-3
SPW12N50C3
SPW12N50C3
Infineon Technologies
N-CHANNEL POWER MOSFET
BSC0403NSATMA1
BSC0403NSATMA1
Infineon Technologies
150V, N-CH MOSFET, LOGIC LEVEL,
IRFU7440PBF
IRFU7440PBF
Infineon Technologies
MOSFET N-CH 40V 90A IPAK
SI7439DP-T1-GE3
SI7439DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 150V 3A PPAK SO-8
IPP60R125C6XKSA1
IPP60R125C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 30A TO220-3
PJD6NA40_R2_00001
PJD6NA40_R2_00001
Panjit International Inc.
400V N-CHANNEL MOSFET
DMP3045LVT-13
DMP3045LVT-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V TSOT26 T&R
BSP372 E6327
BSP372 E6327
Infineon Technologies
MOSFET N-CH 100V 1.7A SOT223-4
2SK2266(TE24R,Q)
2SK2266(TE24R,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 45A TO220SM
SI7668ADP-T1-E3
SI7668ADP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
R6047ENZ4C13
R6047ENZ4C13
Rohm Semiconductor
MOSFET N-CH 600V 47A TO247

Related Product By Brand

RKZ6.8TKJ#R1
RKZ6.8TKJ#R1
Renesas Electronics America Inc
TVS DIODE 3.5VWM UFP
ICS954130BFLF
ICS954130BFLF
Renesas Electronics America Inc
IC TIMING CTRL HUB P4 48-SSOP
8305AGLF
8305AGLF
Renesas Electronics America Inc
IC CLK BUFFER 2:4 350MHZ 16TSSOP
8N3Q001LG-0070CDI8
8N3Q001LG-0070CDI8
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
8N4Q001KG-0002CDI8
8N4Q001KG-0002CDI8
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
X9448WV24I-2.7
X9448WV24I-2.7
Renesas Electronics America Inc
IC DGTL POT 10KOHM 64TAP 24TSSOP
R7F7010444AFP-C#AA2
R7F7010444AFP-C#AA2
Renesas Electronics America Inc
IC MCU 32BIT FLASH SMD
ISL3232EIRZ
ISL3232EIRZ
Renesas Electronics America Inc
IC TRANSCEIVER FULL 2/2 16QFN
HA17324AF-E
HA17324AF-E
Renesas Electronics America Inc
IC OPAMP GP 4 CIRCUIT 14PSOP
ISL28108FBZ
ISL28108FBZ
Renesas Electronics America Inc
IC OPAMP GP 1 CIRCUIT 8SOIC
EL4340IUZ-T7
EL4340IUZ-T7
Renesas Electronics America Inc
IC AMP MPLEX AMP 24QSOP
70V9369L7PFI8
70V9369L7PFI8
Renesas Electronics America Inc
IC SRAM 288KBIT PARALLEL 100TQFP