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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
NP109N055PUJ-E1B-AY
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Renesas Electronics America Inc NP109N055PUJ-E1B-AY
Manufacturer No:
NP109N055PUJ-E1B-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
NP109N055PUJ-E1B-AY Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 110A TO263
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
110A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta), 220W (Tc)
Operating Temperature:
175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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UnitPrice:
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Quantity:
485
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