Renesas Electronics America Inc-NESG3031M14-T3-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.3V
Frequency - Transition:	-
Noise Figure (dB Typ @ f):	0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
Gain:	7.5dB ~ 16dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 6mA, 2V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	4L2MM, M14

Renesas Electronics America Inc NESG3031M14-T3-A