Renesas Electronics America Inc-NESG2101M05-T1-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	17GHz
Noise Figure (dB Typ @ f):	0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain:	11dB ~ 19dB
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	130 @ 15mA, 2V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	M05

Renesas Electronics America Inc NESG2101M05-T1-A