Renesas Electronics America Inc-NESG2021M16-T3-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain:	10dB ~ 18dB
Power - Max:	175mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	130 @ 5mA, 2V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	M16, 1208

Renesas Electronics America Inc NESG2021M16-T3-A