Renesas Electronics America Inc-N0600N-S17-AY - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	36mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	29.8 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	1380 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta), 20W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3 Isolated Tab

Renesas Electronics America Inc N0600N-S17-AY