N0300N-T1B-AT
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Renesas Electronics America Inc N0300N-T1B-AT

Manufacturer No:
N0300N-T1B-AT
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
N0300N-T1B-AT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 4.5A SC96-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:SC-96-3, Thin Mini Mold
Package / Case:SC-96
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Similar Products

Part Number N0300N-T1B-AT N0300P-T1B-AT  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 4.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 10V -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 1.25W (Ta) -
Operating Temperature 150°C -
Mounting Type Surface Mount -
Supplier Device Package SC-96-3, Thin Mini Mold -
Package / Case SC-96 -

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