ISL6612IRZ-T
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Renesas Electronics America Inc ISL6612IRZ-T

Manufacturer No:
ISL6612IRZ-T
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
ISL6612IRZ-T Datasheet
ECAD Model:
-
Description:
IC GATE DRVR HALF-BRIDGE 10DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Synchronous
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:10.8V ~ 13.2V
Logic Voltage - VIL, VIH:- 
Current - Peak Output (Source, Sink):1.25A, 2A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):36 V
Rise / Fall Time (Typ):26ns, 18ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:10-VFDFN Exposed Pad
Supplier Device Package:10-DFN (3x3)
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Similar Products

Part Number ISL6612IRZ-T ISL6613IRZ-T   ISL6610IRZ-T   ISL6612AIRZ-T   ISL6612BIRZ-T   ISL6612CRZ-T   ISL6612IBZ-T   ISL6612IR-T  
Manufacturer Renesas Electronics America Inc Intersil Intersil Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Last Time Buy Obsolete Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Synchronous Synchronous Synchronous Synchronous Synchronous Synchronous Synchronous Synchronous
Number of Drivers 2 2 4 2 2 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 10.8V ~ 13.2V 10.8V ~ 13.2V 4.5V ~ 5.5V 10.8V ~ 13.2V 7V ~ 13.2V 10.8V ~ 13.2V 10.8V ~ 13.2V 10.8V ~ 13.2V
Logic Voltage - VIL, VIH - - - - - - - -
Current - Peak Output (Source, Sink) 1.25A, 2A 1.25A, 2A -, 4A 1.25A, 2A 1.25A, 2A 1.25A, 2A 1.25A, 2A 1.25A, 2A
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 36 V 36 V 36 V 36 V 36 V 36 V 36 V 36 V
Rise / Fall Time (Typ) 26ns, 18ns 26ns, 18ns 8ns, 8ns 26ns, 18ns 26ns, 18ns 26ns, 18ns 26ns, 18ns 26ns, 18ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 10-VFDFN Exposed Pad 10-VFDFN Exposed Pad 16-VQFN Exposed Pad 10-VFDFN Exposed Pad 10-VFDFN Exposed Pad 10-VFDFN Exposed Pad 8-SOIC (0.154", 3.90mm Width) 10-VFDFN Exposed Pad
Supplier Device Package 10-DFN (3x3) 10-DFN (3x3) 16-QFN (4x4) 10-DFN (3x3) 10-DFN (3x3) 10-DFN (3x3) 8-SOIC 10-DFN (3x3)

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