Renesas Electronics America Inc-HSG1002VE-TL-E - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.5V
Frequency - Transition:	38GHz
Noise Figure (dB Typ @ f):	0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain:	8dB ~ 19.5dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 2V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Gull Wing
Supplier Device Package:	4-MFPAK

Renesas Electronics America Inc HSG1002VE-TL-E