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HSG1002VE-TL-E
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Renesas Electronics America Inc HSG1002VE-TL-E

Manufacturer No:
HSG1002VE-TL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
HSG1002VE-TL-E Datasheet
ECAD Model:
-
Description:
RF 0.035A C BAND GERMANIUM NPN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):3.5V
Frequency - Transition:38GHz
Noise Figure (dB Typ @ f):0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain:8dB ~ 19.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 2V
Current - Collector (Ic) (Max):35mA
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:4-MFPAK
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In Stock

$0.38
2,149

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