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| Part Number | HIP2100EIBZT | HIP2101EIBZT | HIP2100IBZT | HIP2100EIBT | HIP2100EIBZ |
|---|---|---|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Product Status | Active | Active | Active | Obsolete | Active |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Channel Type | Independent | Independent | Independent | Independent | Independent |
| Number of Drivers | 2 | 2 | 2 | 2 | 2 |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| Voltage - Supply | 9V ~ 14V | 9V ~ 14V | 9V ~ 14V | 9V ~ 14V | 9V ~ 14V |
| Logic Voltage - VIL, VIH | 4V, 7V | 0.8V, 2.2V | 4V, 7V | 4V, 7V | 4V, 7V |
| Current - Peak Output (Source, Sink) | 2A, 2A | 2A, 2A | 2A, 2A | 2A, 2A | 2A, 2A |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 114 V | 114 V | 114 V | 114 V | 114 V |
| Rise / Fall Time (Typ) | 10ns, 10ns | 10ns, 10ns | 10ns, 10ns | 10ns, 10ns | 10ns, 10ns |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC-EP | 8-SOIC-EP | 8-SOIC | 8-SOIC-EP | 8-SOIC-EP |
