Renesas Electronics America Inc-HFA3102BZ - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	6 NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	10GHz
Noise Figure (dB Typ @ f):	1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
Gain:	12.4dB ~ 17.5dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 10mA, 3V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	14-SOIC

Renesas Electronics America Inc HFA3102BZ