HAT2279N-EL-E
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Renesas Electronics America Inc HAT2279N-EL-E

Manufacturer No:
HAT2279N-EL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
HAT2279N-EL-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 30A 8LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:12.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3520 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-LFPAK-iV
Package / Case:8-PowerSOIC (0.154", 3.90mm Width)
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Similar Products

Part Number HAT2279N-EL-E HAT2279H-EL-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.3mOhm @ 15A, 10V 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 3520 pF @ 10 V 3520 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-LFPAK-iV LFPAK
Package / Case 8-PowerSOIC (0.154", 3.90mm Width) SC-100, SOT-669

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