Renesas Electronics America Inc-HAT2279HWS-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	60 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3520 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	25W (Tc)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK
Package / Case:	SC-100, SOT-669

Renesas Electronics America Inc HAT2279HWS-E