HAT2279H-EL-E
  • Share:

Renesas Electronics America Inc HAT2279H-EL-E

Manufacturer No:
HAT2279H-EL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
HAT2279H-EL-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 30A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3520 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

-
392

Please send RFQ , we will respond immediately.

Similar Products

Part Number HAT2279H-EL-E HAT2279N-EL-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V 12.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 3520 pF @ 10 V 3520 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK 8-LFPAK-iV
Package / Case SC-100, SOT-669 8-PowerSOIC (0.154", 3.90mm Width)

Related Product By Categories

SIDR680DP-T1-GE3
SIDR680DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 32.8A/100A PPAK
IPBE65R099CFD7AATMA1
IPBE65R099CFD7AATMA1
Infineon Technologies
MOSFET N-CH 650V 24A TO263-7
SIHP6N80AE-GE3
SIHP6N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 5A TO220AB
SI2321-TP
SI2321-TP
Micro Commercial Co
MOSFET P-CH 20V 2.9A SOT23
RM6005AR
RM6005AR
Rectron USA
MOSFET N-CHANNEL 60V 5A SOT223-3
SSM3K15ACT(TPL3)
SSM3K15ACT(TPL3)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 100MA CST3
NVMFS4C03NWFT3G
NVMFS4C03NWFT3G
onsemi
MOSFET N-CH 30V 31.4A/143A 5DFN
PSMN014-60LS,115
PSMN014-60LS,115
NXP USA Inc.
MOSFET N-CH 60V 40A 8DFN
NTBV75N06T4G
NTBV75N06T4G
onsemi
MOSFET N-CH 60V 75A D2PAK
RJK2508DPK-00#T0
RJK2508DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 250V 50A TO3P
AOB12N60FDL
AOB12N60FDL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 12A TO263
DI017N06PQ-AQ
DI017N06PQ-AQ
Diotec Semiconductor
MOSFET, POWERQFN 5X6, 60V, 17A,

Related Product By Brand

XLH535019.843750I
XLH535019.843750I
Renesas Electronics America Inc
XTAL OSC XO 19.84375MHZ HCMOS
8533AGI-01LF
8533AGI-01LF
Renesas Electronics America Inc
IC CLK BUFFER 2:4 650MHZ 20TSSOP
843256CK-24LF
843256CK-24LF
Renesas Electronics America Inc
IC SYNNTHESIZE 6LVPECL 32-VFQFPN
9FGV1005A112LTGI8
9FGV1005A112LTGI8
Renesas Electronics America Inc
IC CLOCK GENERATOR LGA
8N3SV76LC-0080CDI8
8N3SV76LC-0080CDI8
Renesas Electronics America Inc
IC OSC VCXO 125MHZ 6-CLCC
8N4DV85FC-0095CDI8
8N4DV85FC-0095CDI8
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N4SV76BC-0085CDI
8N4SV76BC-0085CDI
Renesas Electronics America Inc
IC OSC VCXO 160MHZ 6-CLCC
R5F11BGCAFB#10
R5F11BGCAFB#10
Renesas Electronics America Inc
IC MCU 16BIT 32KB FLASH 48LFQFP
R5F21321CNSP#U0
R5F21321CNSP#U0
Renesas Electronics America Inc
IC MCU 16BIT 4KB FLASH 20LSSOP
89HT0808PYAAB
89HT0808PYAAB
Renesas Electronics America Inc
IC INTFACE SPECIALIZED 100FPBGA
7200L15TPGI
7200L15TPGI
Renesas Electronics America Inc
IC MEM FIFO 256X9 15NS 28DIP
7200L15SOGI8
7200L15SOGI8
Renesas Electronics America Inc
IC MEM FIFO 256X9 15NS 28-SOIC