HAT2266HWS-E
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Renesas Electronics America Inc HAT2266HWS-E

Manufacturer No:
HAT2266HWS-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
HAT2266HWS-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 30A 5LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):23W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Similar Products

Part Number HAT2266HWS-E HAT2166HWS-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V 3.8mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V 27 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 10 V 4400 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 23W (Tc) 25W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669

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