Renesas Electronics America Inc-HAT2210RWS-E - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual), Schottky
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs:	24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	630pF @ 10V, 1330pF @ 10V
Power - Max:	1.5W (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

Renesas Electronics America Inc HAT2210RWS-E