HAT2199R-EL-E
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Renesas Electronics America Inc HAT2199R-EL-E

Manufacturer No:
HAT2199R-EL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
HAT2199R-EL-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 11A 8SOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:16.5mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
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$0.83
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Similar Products

Part Number HAT2199R-EL-E HAT2197R-EL-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 5.5A, 10V 6.7mOhm @ 8A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V 18 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 2650 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOP 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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