Renesas Electronics America Inc-HAT2185WPWS-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	9.7 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	430 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	20W (Tc)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	8-WPAK (3)
Package / Case:	8-PowerWDFN

Renesas Electronics America Inc HAT2185WPWS-E