HAT2172H-EL-E
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Renesas Electronics America Inc HAT2172H-EL-E

Manufacturer No:
HAT2172H-EL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
HAT2172H-EL-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 30A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2420 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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In Stock

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Similar Products

Part Number HAT2172H-EL-E HAT2172N-EL-E   HAT2174H-EL-E   HAT2175H-EL-E   HAT2173H-EL-E   HAT2170H-EL-E   HAT2171H-EL-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 100 V 100 V 100 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 30A (Ta) 20A (Ta) 15A (Ta) 25A (Ta) 45A (Ta) 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V - 8V, 10V 8V, 10V 8V, 10V 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 15A, 10V 7.8mOhm @ 15A, 10V 27mOhm @ 10A, 10V 42mOhm @ 7.5A, 10V 15mOhm @ 12.5A, 10V 4.2mOhm @ 22.5A, 10V 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA - - - 6V @ 20mA 3V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 32 nC @ 10 V 33.5 nC @ 10 V 21 nC @ 10 V 61 nC @ 10 V 62 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2420 pF @ 10 V 2420 pF @ 10 V 2280 pF @ 10 V 1445 pF @ 10 V 4350 pF @ 10 V 4650 pF @ 10 V 3750 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 20W (Tc) 20W (Tc) 20W (Tc) 15W (Tc) 30W (Tc) 30W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK 8-LFPAK-iV LFPAK LFPAK LFPAK LFPAK LFPAK
Package / Case SC-100, SOT-669 8-PowerSOIC (0.154", 3.90mm Width) SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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