HAT2170HWS-E
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Renesas Electronics America Inc HAT2170HWS-E

Manufacturer No:
HAT2170HWS-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
HAT2170HWS-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 45A 5LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:45A (Ta)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4650 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Similar Products

Part Number HAT2170HWS-E HAT2173HWS-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 100 V
Current - Continuous Drain (Id) @ 25°C 45A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 22.5A, 10V 15mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4650 pF @ 10 V 4350 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669

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