HAT2165N-EL-E
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Renesas Electronics America Inc HAT2165N-EL-E

Manufacturer No:
HAT2165N-EL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
HAT2165N-EL-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 55A 8LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:55A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:3.6mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:5180 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-LFPAK-iV
Package / Case:8-PowerSOIC (0.154", 3.90mm Width)
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$1.91
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Similar Products

Part Number HAT2165N-EL-E HAT2165H-EL-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta) 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 27.5A, 10V 3.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V 33 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 5180 pF @ 10 V 5180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-LFPAK-iV LFPAK
Package / Case 8-PowerSOIC (0.154", 3.90mm Width) SC-100, SOT-669

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