HAT2160H-EL-E
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Renesas Electronics America Inc HAT2160H-EL-E

Manufacturer No:
HAT2160H-EL-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
HAT2160H-EL-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 60A LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7750 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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Similar Products

Part Number HAT2160H-EL-E HAT2164H-EL-E   HAT2170H-EL-E   HAT2168H-EL-E   HAT2169H-EL-E   HAT2166H-EL-E   HAT2165H-EL-E   HAT2140H-EL-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 40 V 30 V 40 V 30 V 30 V 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta) 60A (Ta) 45A (Ta) 30A (Ta) 50A (Ta) 45A (Ta) 55A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 7V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 30A, 10V 3.1mOhm @ 30A, 10V 4.2mOhm @ 22.5A, 10V 7.9mOhm @ 15A, 10V 3.5mOhm @ 25A, 10V 3.8mOhm @ 22.5A, 10V 3.3mOhm @ 27.5A, 10V 16mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA - 3V @ 1mA - 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 4.5 V 50 nC @ 4.5 V 62 nC @ 10 V 11 nC @ 4.5 V 45 nC @ 4.5 V 27 nC @ 4.5 V 33 nC @ 4.5 V 105 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7750 pF @ 10 V 7600 pF @ 10 V 4650 pF @ 10 V 1730 pF @ 10 V 6650 pF @ 10 V 4400 pF @ 10 V 5180 pF @ 10 V 6500 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc) 15W (Tc) 30W (Tc) 25W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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