Renesas Electronics America Inc-HAT2131R-EL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	350 V
Current - Continuous Drain (Id) @ 25°C:	900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	3Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	460 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)

Renesas Electronics America Inc HAT2131R-EL-E