Renesas Electronics America Inc-HAT2092R-EL-E - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	11A
Rds On (Max) @ Id, Vgs:	16mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1400pF @ 10V
Power - Max:	3W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

Renesas Electronics America Inc HAT2092R-EL-E