Renesas Electronics America Inc-HAT2054M-EL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	31mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	620 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.05W (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSOP
Package / Case:	SOT-23-6 Thin, TSOT-23-6

Renesas Electronics America Inc HAT2054M-EL-E