Renesas Electronics America Inc-HAT2038RWS-E - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Rds On (Max) @ Id, Vgs:	58mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Input Capacitance (Ciss) (Max) @ Vds:	520pF @ 10V
Power - Max:	3W (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

Renesas Electronics America Inc HAT2038RWS-E