HAT1127HWS-E
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Renesas Electronics America Inc HAT1127HWS-E

Manufacturer No:
HAT1127HWS-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
HAT1127HWS-E Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 40A 5LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
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In Stock

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280

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Similar Products

Part Number HAT1127HWS-E HAT1125HWS-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 40A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id 2.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V -
Vgs (Max) +10V, -20V -
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 30W (Tc) -
Operating Temperature 150°C -
Mounting Type Surface Mount -
Supplier Device Package LFPAK -
Package / Case SC-100, SOT-669 -

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