HAT1127HWS-E
  • Share:

Renesas Electronics America Inc HAT1127HWS-E

Manufacturer No:
HAT1127HWS-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
HAT1127HWS-E Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 40A 5LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:LFPAK
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

-
280

Please send RFQ , we will respond immediately.

Similar Products

Part Number HAT1127HWS-E HAT1125HWS-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 40A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id 2.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V -
Vgs (Max) +10V, -20V -
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 30W (Tc) -
Operating Temperature 150°C -
Mounting Type Surface Mount -
Supplier Device Package LFPAK -
Package / Case SC-100, SOT-669 -

Related Product By Categories

RJK0397DPA-00#J53
RJK0397DPA-00#J53
Renesas Electronics America Inc
MOSFET N-CH 30V 30A 8WPAK
RF1S23N06LESM
RF1S23N06LESM
Harris Corporation
N-CHANNEL POWER MOSFET
HUF76132S3S
HUF76132S3S
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
G3R12MT12K
G3R12MT12K
GeneSiC Semiconductor
1200V 12M TO-247-4 G3R SIC MOSFE
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 2A CST3B
IRLR024NTRLPBF
IRLR024NTRLPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
FCPF400N80Z
FCPF400N80Z
onsemi
MOSFET N-CH 800V 11A TO220F
NTJS3151PT1G
NTJS3151PT1G
onsemi
MOSFET P-CH 12V 2.7A SC88/SC70-6
PJQ2407_R1_00001
PJQ2407_R1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
PJQ4443P_R2_00001
PJQ4443P_R2_00001
Panjit International Inc.
40V P-CHANNEL ENHANCEMENT MODE M
SIHP125N60EF-GE3
SIHP125N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 25A TO220AB
SI7615BDN-T1-GE3
SI7615BDN-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 29A/104A PPAK

Related Product By Brand

XLP730019.531000X
XLP730019.531000X
Renesas Electronics America Inc
XTAL OSC XO 19.5310MHZ LVPECL
8N4SV76EC-0055CDI8
8N4SV76EC-0055CDI8
Renesas Electronics America Inc
IC OSC VCXO 156.25MHZ 6-CLCC
8N4QV01EG-1074CDI
8N4QV01EG-1074CDI
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
8N4QV01FG-0104CDI
8N4QV01FG-0104CDI
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
X9313ZSZT1
X9313ZSZT1
Renesas Electronics America Inc
IC DGTL POT 1KOHM 32TAP 8SOIC
R5F51135ADLJ#20
R5F51135ADLJ#20
Renesas Electronics America Inc
IC MCU 32BIT 128KB FLSH 100TFLGA
EL5362IUZ
EL5362IUZ
Renesas Electronics America Inc
IC OPAMP CFA 3 CIRCUIT 16QSOP
7203L20TP
7203L20TP
Renesas Electronics America Inc
IC MEM FIFO 2048X9 20NS 28-DIP
71V3577S80BGGI
71V3577S80BGGI
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 119PBGA
7008S35J8
7008S35J8
Renesas Electronics America Inc
IC SRAM 512KBIT PARALLEL 84PLCC
IDT71016S12YI8
IDT71016S12YI8
Renesas Electronics America Inc
IC SRAM 1MBIT PARALLEL 44SOJ
UPC29M06HF-AZ
UPC29M06HF-AZ
Renesas Electronics America Inc
IC REG LINEAR FIXED LDO REG