HAT1125HWS-E
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Renesas Electronics America Inc HAT1125HWS-E

Manufacturer No:
HAT1125HWS-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
HAT1125HWS-E Datasheet
ECAD Model:
-
Description:
P-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$2.25
347

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Similar Products

Part Number HAT1125HWS-E HAT1127HWS-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Obsolete
FET Type - P-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 125 nC @ 10 V
Vgs (Max) - +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds - 5600 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 30W (Tc)
Operating Temperature - 150°C
Mounting Type - Surface Mount
Supplier Device Package - LFPAK
Package / Case - SC-100, SOT-669

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