Renesas Electronics America Inc-HAT1072H-EL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	155 nC @ 10 V
Vgs (Max):	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	9500 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	30W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK
Package / Case:	SC-100, SOT-669

Renesas Electronics America Inc HAT1072H-EL-E