Renesas Electronics America Inc-HAT1047RWS-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	12mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	64 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3500 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)

Renesas Electronics America Inc HAT1047RWS-E