Renesas Electronics America Inc-HAT1043M-EL-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	11 nC @ 4.5 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	750 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.05W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSOP
Package / Case:	SOT-23-6 Thin, TSOT-23-6

Renesas Electronics America Inc HAT1043M-EL-E