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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
H5N3011P80-E#T2
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Renesas Electronics America Inc H5N3011P80-E#T2
Manufacturer No:
H5N3011P80-E#T2
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
H5N3011P80-E#T2 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
Product Attributes
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Mounting Type:
-
Supplier Device Package:
-
Package / Case:
-
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In Stock
UnitPrice:
$12.32
Quantity:
42
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