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GN1L4M-T2-A
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Renesas Electronics America Inc GN1L4M-T2-A

Manufacturer No:
GN1L4M-T2-A
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
GN1L4M-T2-A Datasheet
ECAD Model:
-
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:95 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:200mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:- 
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
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In Stock

$0.10
2,423

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