Renesas Electronics America Inc-2SK4151TZ-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150 V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Rds On (Max) @ Id, Vgs:	1.95Ohm @ 500mA, 4V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	3.5 nC @ 4 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	98 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	750mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

Renesas Electronics America Inc 2SK4151TZ-E